| 摘要 |
A surface of a transparent substrate is exposed at a first light transmission region Ta1, a semi-shield film is formed on the surface of the transparent substrate at a second light transmission region Ta2, a trench is formed at the surface of the transparent substrate at a third light transmission region Tn1, the semi-shield film and a phase shifter layer are layered on the surface of the transparent substrate at a fourth light transmission region Tn2, and the semi-shield film, the phase shifter layer and a shield film are layered on the surface of the transparent substrate at a shield region S. Thereby, hole patterns at a fine pitch can be precisely formed at a photoresist of a positive type by an exposure apparatus using a reduced number of a mask and having a simple structure.
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