| 摘要 |
<p>PROBLEM TO BE SOLVED: To obtain a non-volatile semiconductor memory which can perform a page program at high speed. SOLUTION: This device is provided with a first memory array 10 and a second memory array 20 in which a page program is performed with a word line unit and which are paired each other, and a control circuit 40 performing transfer operation and program operation of page program data [Da] and [Db] for the two memory arrays 10, 20 mutually and in parallel. Thereby, data programming can be performed at the speed two times as mush as the normal speed.</p> |
