| 摘要 |
PURPOSE:To obtain the stable manufacturing technique of an a-Si solar cell by forming the film of an amorphous silicon layer, forming the film of an intermediate layer consisting of a sublimating conductive substance in specified thickness and shaping a metallic electrode through evaporation. CONSTITUTION:An a-Si layer 3 is formed onto a transparent insulating substrate such as a glass plate 1 having thickness of 1mm through a transparent electrode 2 consisting of a transparent conductive film having thickness of 20-200nm by the glow discharge decomposition of silane. The a-Si layer 3 has thickness of 1mum, the film 4 of ITO, SnO2, etc., having thickness of 20-l00nm is shaped onto the whole surface of the layer 3 as a sublimating conductive substance through evaporation, and the upper section of the film 4 is coated with a metallic electrode 5 formed through an evaporation method and composed of Al/Ti. The metallic electrode 5 is 1-2mum thick. Accordingly, since a splash, a bumping, etc., are reduced at the time of evaporation in the sublimating conductive substance, the a-Si layer 3 gets no trouble, and the sublimating conductive substance fills the role of protection against metallic particles colliding by the bumping, etc. |
