| 摘要 |
A ferroelectric non-volatile memory which can ensure a sufficient operational margin, wherein memory cells each constituted by a capacitor using a ferroelectric material for the dielectric film and a select transistor are arranged in a matrix to constitute a so-called folded bit-line structure, when reading out data to either a bit line of an even column or a bit line of an odd column, the other bit line is biased to a constant voltage, and, due to this, the coupling noise from adjoining bit lines is shielded.
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