发明名称 |
Method of fabricating an epitaxial wafer |
摘要 |
There is provided a high quality epitaxial water on which the density of microscopic defects in the epitaxial layer is reduced to keep the GOI thereof sufficiently high and to reduce a leakage current at the P-N junction thereof when devices are incorporated, to thereby improve the yield of such devices. In an epitaxial wafer obtained by forming an epitaxial layer on a substrate, the density of IR laser scatterers is 5x105 pieces/cm3 or less throughout the epitaxial layer.
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申请公布号 |
US5744380(A) |
申请公布日期 |
1998.04.28 |
申请号 |
US19970806310 |
申请日期 |
1997.02.26 |
申请人 |
KOMATSU ELECTRONIC METALS CO., LTD. |
发明人 |
UEMURA, NORIYUKI;MOTOURA, HISAMI;NISHIMURA, MASASHI;KOHNO, MITSUO |
分类号 |
H01L21/66;C23C14/08;C30B13/00;C30B15/00;C30B29/06;(IPC1-7):H01L21/66;G01N21/88 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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