| 摘要 |
A semiconductor memory device that permits the threshold voltage Vth of a cell transistor to be measured easily and inexpensively is provided. A semiconductor memory device 1 is provided, which has a plurality of cell transistors C for storing predetermined data and is operative at a preset operating voltage Vdd, wherein during normal operation, said operating voltage Vdd is applied between a control gate and a source of each of said cell transistor C, and wherein during testing operation, a test voltage Vcc which is at lower potential than the operating voltage Vdd is applied between the control gate and source of each of said cell transistors C independently of the operating voltage Vdd.
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