| 摘要 |
PROBLEM TO BE SOLVED: To decrease deterioration and to decrease jitters during mark length modulation recording in an optical information recording layer in which overwrite recording is performed by modulating the intensity of light into two or more levels, by forming a MGeSbTe alloy film as a phase transition optical recording layer. SOLUTION: The compsn. range of Ge, Sb, Te in a phase transition recording layer of an optical information recording medium is shown in the figure. The compsn. range of the MGeSbTe (wherein M is at least one of Ag and Zn) alloy film is obtd. by adding Ge to a base material of near Sb70 Te30 eutectic structure and further adding a specified amt. of Ag or Zn. By adding Ge, especially the thermal stability in an amorphous state can be improved. By adding a proper amt. of Ag or Zn, difficulty in initial crystallization is avoided and the productivity can be increased. Thus, the obtd. medium causes little deterioration and jitters can be decreased during mark length modulation recording. |
