| 摘要 |
PROBLEM TO BE SOLVED: To detect changes in pattern formation state and to manage process with sure and promptly, by irradiating a periodic pattern formed on a substrate with an incident light flux, photo-detecting a signal light flux from the pattern, for obtaining pattern's formation state. SOLUTION: A pattern comprising an L and S pattern drawn on a reticule is, by step and repeat method, sequentially poured, for exposure, on a wafer coated with a resist. The resist on the wafer after exposure has latent images 301-309 in the resist. The latent images 301-309 are, by exposure light, constituted through resist's chemical change, etc., for property change, with the oblique line part being exposed part. Generally, refraction factor is changed. If abnormality exists with an exposure device at this stage, these latent images 301-309 are different in shape, so the results of measuring pattern's formation state are different. Thereby, changes in pattern formation state are detected, for process management. |
