发明名称 MANUFACTURE OF QUATERNARY MIXED CRYSTAL OF IMMISCIBLE COMPOUND SEMICONDUCTOR
摘要 PURPOSE:To obtain a quaternary mixed crystal of compound semiconductor having a uniform composition even in an immiscible quaternary mixed crystal, by alternately laminating super-thin film of binary compounds, whose lattice constants are approximately equal, forming a super lattice, and thereafter disorganizing the super lattice by impurity diffusion. CONSTITUTION:The super thin films of two kinds of binary compounds AC and BD (A-D are different elements) do not have common components but have the approximately equal lattice constants. Said super-thin films are alternately laminated, and a super lattice is formed. Impurities are diffused in a suitable concentration, and the super lattice is disorganized. Thus a quaternary mixed crystal, whose compositions are uniform, is obtained. The compositions are A1-x, Bx, C1-x and Dx. The atomic arrangement on the crystal lattice is disorganized without changing the average lattice constant. Therefore, the quaternary mixed crystal having the uniform compositions can be obtained even in compounds, in which a thermally equivalent, uniform mixed state is not present.
申请公布号 JPS63179513(A) 申请公布日期 1988.07.23
申请号 JP19870013000 申请日期 1987.01.21
申请人 NEC CORP 发明人 ONABE KENTAROU
分类号 H01L21/20;H01L21/22 主分类号 H01L21/20
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