| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a CVD device for a high melting point metallic silicide film having a surface processing function, and a semiconductor device which includes the MOS transistor of a polycide gate electrode excellent in adhesion between a polysilicon film and a high melting point metallic silicide film and ohmic property and is made by the use of this CVD device. SOLUTION: A CVD device 50 is composed of a loading chamber part 51, a surface processing chamber 52 which processes the surface of a semiconductor in inert gas including reductive gas or halogen gas, a CVD chamber part 53 which accumulates a tungsten silicide film, an unloading chamber part 54 which takes out a substrate to be processed, and others. Here, by this CVD device 50, a semiconductor device which includes the MOS transistor of a polycide gate electrode is manufactured, adopting the process of forming a WSi2 film after removing the natural oxide film made on the surface of the polysilicon film. |
