发明名称 |
Plasma assisted apparatus and method of diamond synthesis. |
摘要 |
<p>The present invention includes an apparatus and method for depositing diamond on a substrate. A hydrocarbon/hydrogen gas mixture is passed through a refractory metal hollow cathode which is self heated to a high temperature. The gas mixture is dissociated by a combination of thermal and plasma effects. The plasma plume emanating from the hollow cathode heats the substrate which is positioned on a surface of the anode. Growth of the diamond film is enhanced by bombardment of electrons.</p> |
申请公布号 |
EP0297845(A2) |
申请公布日期 |
1989.01.04 |
申请号 |
EP19880305899 |
申请日期 |
1988.06.29 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
SINGH, BAWA;MESKER, ORMOND ROY;ARIE, YEHUDA |
分类号 |
C30B29/04;C23C16/513;C30B25/10 |
主分类号 |
C30B29/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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