发明名称 Plasma assisted apparatus and method of diamond synthesis.
摘要 <p>The present invention includes an apparatus and method for depositing diamond on a substrate. A hydrocarbon/hydrogen gas mixture is passed through a refractory metal hollow cathode which is self heated to a high temperature. The gas mixture is dissociated by a combination of thermal and plasma effects. The plasma plume emanating from the hollow cathode heats the substrate which is positioned on a surface of the anode. Growth of the diamond film is enhanced by bombardment of electrons.</p>
申请公布号 EP0297845(A2) 申请公布日期 1989.01.04
申请号 EP19880305899 申请日期 1988.06.29
申请人 GENERAL ELECTRIC COMPANY 发明人 SINGH, BAWA;MESKER, ORMOND ROY;ARIE, YEHUDA
分类号 C30B29/04;C23C16/513;C30B25/10 主分类号 C30B29/04
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