Method of, and apparatus for, dry etching.

摘要

This invention provides a method of dry etching and an apparatus for use with such method capable of producing a multi-layered structure having substantially a flat etched wall and high selectivity. There is provided a method of dry etching that disposing an object having a first film and second film thereon in a vacuum chamber, introducing an activated reacted gas, and cooling the object to less than a temperature which causes a film to be deposited including at least an element of the first film material on the first film.