Method for patterned tin oxide thin film element.

摘要

A method is disclosed for forming a semiconductor tin oxide thin film (22) on a selected region of a surface (12) without forming the film on adjacent regions. An ink film composed of tin(II) carboxylate compound is applied to the surface and heated to partially decompose the tin compound. A positive photo-resist layer (16,18) is preferably applied to the partially decomposed layer (14) and selectively irradiated to define a mask (18) overlying the selected region. Unwanted photo-resist material is dissolved from the adjacent regions using an aqueous alkaline solution. It is found that the solution concurrently dissolves the underlying partially decomposed tin compound, without dissolving the tin compound protected by the mask (18). Thereafter, the mask (18) is removed, and the underlying tin compound is heated and further decomposed to produce the desired tin oxide thin film (22).