发明名称 METHOD FOR ANALYSING CHEMICAL STATE
摘要 <p>PROBLEM TO BE SOLVED: To detect a chemical state of an element on a surface more deeply even in the atmosphere by irradiating a sample with X-rays high in energy to excite inner-shell electrons and transiting outer-shell electrons to generate holes to use characteristic X-rays generated corresponding to a level difference as a probe detecting the chemical state of the sample. SOLUTION: The effect of a change of a chemical state on characteristic X-rays becomes large by the transition of electrons participated in a chemical bond. In the case of Ga and As, bonded electrons become 4p electrons. A 4p electron orbit is N2.3 and the lagest intensity change is observed in K-N2.3 (Kβ2 ) rays. The electron transition of an outer-shell orbit is set toΣ12 to employ K-N2.3 . Since levels of N are contracted and overlapped, the area of the peak formed by both levels is measured to be set to intensity. This intensity is set to a numerator and characteristic X-ray intensityΣ34 is set to a denominator. An intensity ratio becomes an order of 10<-2> because the peak of Kαrays is high. Detection can be performed in the vicinity of a surface and in several ten layers.</p>
申请公布号 JPH10111261(A) 申请公布日期 1998.04.28
申请号 JP19960283294 申请日期 1996.10.04
申请人 SUMITOMO ELECTRIC IND LTD 发明人 IIHARA JUNJI
分类号 G01N23/223;(IPC1-7):G01N23/223 主分类号 G01N23/223
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