发明名称 METHOD FOR MANUFACTURING CELL ARRAY OF MEMORY DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a cell array manufacturing method of trench separation type wherein coupling ratio between a control gate and a floating gate is raised, and characteristics drop of an inter-layer insulation body is prevented. SOLUTION: After stoppers 204 and 205 are formed on a first conductor 203 formed on a tunnel insulating body 202, a trench formation part is dug down to a substrate by etching (trench formation process). After an element separation body 208 which covers a cell array surface while a trench 207 is filled is formed, flattening is performed until the stopper 205 is exposed (flattening process). Further, the stoppers 204 and 205 and the element separating body are etched so that up to the side surface part of the first conductor 203 is exposed, with an inter-layer insulating body 209 formed over it (inter-layer insulation process). Then, the second conductor 210 is formed on the inter-layer insulating body 209 and then patterned, so that a floating gate 203 and a control gate 210 are formed (cell formation process).</p>
申请公布号 JPH10107167(A) 申请公布日期 1998.04.24
申请号 JP19970248913 申请日期 1997.09.12
申请人 SAMSUNG ELECTRON CO LTD 发明人 KIN OSHU;SAI SEITATSU;AN SEITAI
分类号 H01L21/8247;H01L21/76;H01L27/115;H01L29/788;H01L29/792;(IPC1-7):H01L21/824 主分类号 H01L21/8247
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