发明名称 SEMICONDUCTOR WAFER HEAT TREATMENT APPARATUS
摘要 <p>PROBLEM TO BE SOLVED: To make feasible of uniform heat teatment as well as various process temperature range by a method wherein the title heat treatment apparatus is provided with heat resistant heaters arranged in susceptors and lamps heating inside of process chamber arranged above a wafer. SOLUTION: The heat treatment process temperature inside a process chamber 21 is maintained by halogen lamps 28 arranged above a wafer 23, heat resistant heaters 29 arranged on susceptors 22 and temperature sensors 30 also arranged on the susceptors 22 so as to set up the heating temperature range of the halogen lamps 28 and the heat resistant heaters 29 according to the characteristics of the temperature sensors 30 thereby enabling the temperature control and the process temperature range to be variously adjusted. Besides, a gas indicator 33 is provided on the sidewall of the process chamber 21 furthermore, a gas heater 34 is provided on the gas feed line of the gas indicator 33 so as to preheat the gas. Through these procedures, various heat treatment processes can be performed while enabling the even heat treatment of large diameter wafers to be performed.</p>
申请公布号 JPH10107018(A) 申请公布日期 1998.04.24
申请号 JP19970097110 申请日期 1997.04.15
申请人 SAMSUNG ELECTRON CO LTD 发明人 KANG SEONG-HUN;KOH YOUNG-LARK;RI TEIKEI
分类号 H01L21/31;C23C16/44;C23C16/455;C23C16/46;C23C16/48;H01L21/00;H01L21/26;H01L21/322;H01L21/324;(IPC1-7):H01L21/31 主分类号 H01L21/31
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