| 摘要 |
PROBLEM TO BE SOLVED: To easily form a diffusion layer only in a prescribed region by a method in which a defective layer induced by ion implantation failure and a diffusion source layer are formed, impurities are diffused into the defective layer from the diffusion source layer through a low-temperature heat treatment to form a junction and selectively injected only at prescribed points. SOLUTION: A photoresist 6 is formed in a region where an N-channel MOS transistor is formed to cover an N-channel MOS transistor forming region. Ar, F, N and the like are introduced into a P-channel transistor region by ion implantation. A defective layer 8 where crystal defects are induced in an N-well region is formed at a very shallow level. The defective layer 8 is as thick as 400Åor so. Moreover, Ar ions are implanted with 50keV and 1E14cm<2> or so, and the defective layer 8 is 500Åor so in thickness. N ions are implanted with 20keV and 2E15cm<2> or so, and the defective layer 8 is 50Åor so in thickness.
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