| 摘要 |
PROBLEM TO BE SOLVED: To provide a III nitride semiconductor laser, which has a high conductivity substrate and where a cleavage plane serves as a laser resonance plane. SOLUTION: A laser diode is composed of a silicon substrate 1 and an AlXGay In1-x-y N film 3N (x and y are so set as to satisfy the formulas, 0<=x, 0<=y, 0<=x+y<=1 including x=0, y=0 or x=y=0) formed on the (111) plane of the substrate, and the (1, -1, 0, 0) plane of the Alx Gay In1-x-y N film 3N is cleaved at the same time, when the (111) plane S3 other than the surface of the substrate 1 is cleaved, and the (1, -1, 0, 0) plane S4 of the Alx Gay In1-x-y N film 3N is made to serve as the resonance plane of the laser resonator of the laser diode. |
