| 摘要 |
PROBLEM TO BE SOLVED: To implant electrons efficiently into a gallium nitride layer from a silicon carbide substrate by a method in which a specific silicon carbide single crystal substrate is used as a hetero epitaxy substrate, and a hetero junction of gallium nitride and silicon carbide is formed. SOLUTION: A 4H-type silicon carbide substrate is used as a gallium nitride hetero-epitaxy substrate. A 4H-type silicon carbide single crystal substrate is as small as a 6H-type silicon carbide substrate in lattice constant difference with gallium nitride, and crystals graphically high-quality gallium nitride can be formed on the 4H-type silicon carbide single crystal substrate. That is, a well-cleaned N-type 4H-type silicon carbide substrate ( 0001} plane wafer) is set in a reactor of an MOCVD device, and an atmosphere in the reactor is well replaced with hydrogen. Then, the reactor is set at a temperature of 1050 deg.C, for instance, to clean the silicon carbide substrate as hydrogen is made to flow inside the reactor. Thereafter, trimethyl gallium, ammonia and monosilane are fed to the reactor, and an N-type gallium nitride film is grown for 60 minutes. |
