| 摘要 |
PROBLEM TO BE SOLVED: To suppress the decrease of the maximum charge handling quantity and the deterioration of the charge transfer efficiency of a vertical charge transfer section due to the influence of an impressed pulse by forming charge storing layers of the same conductivity as those of first and second element isolating region below charge transfer electrodes in a vertical or horizontal charge transfer section group. SOLUTION: The same pulse of a charge transfer pulseϕV4 is impressed upon the second final charge transfer electrode 209a of a vertical charge transfer section which contributes to charge transfer operations and a negative potential is impressed on the second final charge transfer electrode 209b of the charge transfer section which does not contribute to the charge transfer operations over the signal charge transfer period for at least one frame. Then the first P<+> -type semiconductor region 203 of a first element isolating region is electrically connected to the second P<+> -type semiconductor region 204 of a second element isolating region by forming a hole storing layer 21 on the surface of an N-type semiconductor region 205 below the second charge transfer electrode 209b of the vertical charge transfer section. Therefore, the potential at the first element isolating region can be stabilized.
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