| 摘要 |
<p>PROBLEM TO BE SOLVED: To utilize a vacuum source of a large pressure fluctuation which is installed, for example, in a factory. SOLUTION: The negative pressure of a vacuum source 42 with a large pressure fluctuation is reduced to that with a small pressure fluctuation, by a pressure stabilization device 36 that is constituted of a tank 361 and pipes 362 and 363 and is supplied to a stage 30, and a silicon wafer 10 placed on the stage 30 is subjected to vacuum suction. In this state, a sensor body 382 is brought closer to the silicon wafer 10, and at the same time, a bias voltage is applied between the front and back surfaces of the silicon wafer 10, thus measuring the electrostatic capacity between an electrode for measuring the electrical characteristics and the back surface of the silicon wafer 10, thus obtaining the C-V characteristics of the silicon wafer 10.</p> |
