| 摘要 |
PROBLEM TO BE SOLVED: To form an electrically insulated part with improved thermal contact and thermal conductivity with a semiconductor material by allowing the electrically insulated part being exposed to plasma that contains an inactive gas to exist in the n-type or p-type semiconductor layer of a II-VI semiconductor element. SOLUTION: A p-type ZnSe thin film 104 on a GaAs substrate is installed in a vacuum container 102, and Ar 105 that is an inactive gas is introduced into to the container by pressure. High frequency is introduced into the vacuum container 102 by a high-frequency power supply 106 for discharging, and Ar plasma 103 is generated between a substrate holder 107 and an opposing electrode 108, thus exposing the surface of the p-type ZnSe thin film 104 to the Ar plasma 103. Then, a thin insulation layer is formed on the surface of a II-VI semiconductor. The resistivity of the surface of the p-type ZnSe thin film 104 reaches at least 1×10<4> Ω.cm, thus obtaining sufficient resistance as an insulating layer. The thermal conductivity of the insulating layer reaches a superior value, 12W/m.K. Also, no insulation layer peels off, thus achieving an improved adhesive property with the II-VI semiconductor. |
