| 摘要 |
PROBLEM TO BE SOLVED: To prevent a junction leakage current from increasing because a metal filled into a contact hole is connected directly with a substrate in a deeper place than the junction, in the contact portion of a semiconductor device using a trench isolation one portion of which overlaps with the element separating region of the device. SOLUTION: In contact holes, providing extendedly silicide layers 16-1, 16-2 in the sidewall portions of the exposed edges of respective elements, impurity diffusing layers 5-1A, 5 2A are formed so as to cover therewith self-aligned portions 17-1, 17-2 with the respective silicide layers 16-1, 16-2. In the manufacturing method of the foregoing, depositing a high-melting-point metal in each contact hole after the digging thereof, the metal is made into its silicide to form each diffusing layer in a self-aligining way by diffusing the impurity from the silicide. |
