发明名称 METHOD AND DEVICE OF X-RAY LITHOGRAPHY MASK PURIFICATION
摘要 PROBLEM TO BE SOLVED: To prevent readhesion of once exfoliated composition on the surface of an effective region by a method in which ozone plasma is made to irradiate on the surface of the X-ray absorbing film side at least on the effective region of an X-ray lithography mask in such a manner that the X-ray absorbing film is facing down. SOLUTION: The mask M, to be used for X-ray lithography, can be supported in a vacuum vessel 10 from the state in which it is introduced into the vacuum vessel to the state where the surface on the side of an X-ray absorbing film 3 of an effective region 4 is facing down to outside by an X-ray lithography mask supporting means 14. Besides, ozone plasma, can be generated from oxygen gas by an ozone plasma generator 15 by introducing oxygen gas using an oxygen gas introducing means 12 from the state where the X-ray lithography mask M is supported by the X-ray lithography supporting means 14.
申请公布号 JPH10106924(A) 申请公布日期 1998.04.24
申请号 JP19960258023 申请日期 1996.09.30
申请人 NIPPON TELEGR & TELEPH CORP <NTT> 发明人 AKAZAWA MASAYOSHI
分类号 G03F1/82;H01L21/027;H01L21/304 主分类号 G03F1/82
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