| 摘要 |
PROBLEM TO BE SOLVED: To enhance the efficiency of mask exposure of highly integrated ultrafine large-scale patterns by dividing exposure data and decreasing the exposure data quantity to be arranged on the disk of an exposure device, thereby making it possible execute exposure regardless of the types of negative type and positive type photoresists. SOLUTION: The exposure data 1 is divided to the device pattern regions 2 having device patterns 3 and peripheral pattern regions 4 integrating peripheral patterns 5 by the method for dividing the exposure data. The exposure data 1 is divided to a blanking partition file 6 and a device pattern file 10 and the blanking patterns 8 for controlling the unexposed regions of the device pattern regions 2 are generated in the divided peripheral pattern files 6. The absence of the blanking patterns and the presence thereof are arranged in the peripheral pattern files 6, by which the prepn. of the exposure data 1 is completed. The exposure is executed in order of the device pattern films 10 from the peripheral pattern files 6 is executed by using the exposure data 1, by which baking is completed. |
