| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method for an HSG(Hemispherical grain)- polysilicon electrode which prevents incomplete formation of HSG due to impurities attached to an amorphous silicon pattern, and to form a capacitor electrode with increased effective area in a stable manner. SOLUTION: The HSG-polysilicon electrode is manufactured by forming an amorphous silicon pattern 120 on a semiconductor substrate 100, forming an HSG core, and performing heat processing. During a period between the formation of the amorphous silicon pattern and the formation of the HSG core, the surface of the amorphous silicon pattern is covered with a sacrificial film 130. |
