发明名称 MANUFACTURE OF MASKING SUBSTRATE
摘要 PROBLEM TO BE SOLVED: To provide a method of manufacturing masking substrate which form the necessary and minimum width of a strut. SOLUTION: This method prepares a substrate formed by laminating at least a silicon layer 3 and a layer composed of membrane material, in order. A silicon oxide layer 5 is formed on the silicon layer 3. A specific pattern 6 is formed on the silicon oxide layer 5. The silicon layer 3 is etched by a dry etching method capable of etching in the vertical direction, conforming to the pattern 6 of the silicon oxide layer 5.
申请公布号 JPH10106943(A) 申请公布日期 1998.04.24
申请号 JP19970056170 申请日期 1997.03.11
申请人 NIKON CORP 发明人 KATAKURA NORIHIRO
分类号 G03F1/20;G03F1/22;H01L21/027 主分类号 G03F1/20
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