| 摘要 |
PROBLEM TO BE SOLVED: To reduce the heat resistivity of a wafer so as to quickly discharge the heat of the wafer from the rear surface side of the wafer by providing a gate terminal and a drain terminal on the front surface side of the wafer and a source terminal on the rear surface side of the wafer. SOLUTION: On the front surface side 9 of a wafer, trenches 6 are formed into a semiconductor substrate by etching. The trenches 6 are extended into a source area 3 from the upper surface of the wafer through a drain area 2 and a body area 4 and contain gate electrodes 5. The electrodes 5 are insulated from the substrate 1 by thin gate oxide films 7. On the surface side 9 of the wafer, in addition, contact areas 2' are electrically contacted through ordinary metallized layers, for example, aluminum layers. The whole bodies of drain metallized layers are short-circuited and connected to drains D. Because of the short-circuiting, the controllable power of an MOSFET can be raised. The gate electrodes 5 are respectively connected to gate terminals G. |
