PARALLEL BIT TEST CIRCUIT FOR SEMICONDUCTOR MEMORY APPARATUS,申请号JP19970212131-传众专利搜索

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发明名称	PARALLEL BIT TEST CIRCUIT FOR SEMICONDUCTOR MEMORY APPARATUS
摘要
申请公布号	JPH10106297(A)	申请公布日期	1998.04.24
申请号	JP19970212131	申请日期	1997.08.06
申请人	SAMSUNG ELECTRON CO LTD	发明人	SHIN CHUZEN;SEKI YOSHOKU
分类号	G01R31/28;G11C29/26;G11C29/34;G11C29/38;H01L21/66;(IPC1-7):G11C29/00	主分类号	G01R31/28
代理机构		代理人
主权项
地址

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