| 摘要 |
PROBLEM TO BE SOLVED: To ensure the capacitance of a filter capacitor of a power source circuit of a DRAM, while suppressing an occupied area. SOLUTION: A filter capacitor is constructed in such a manner that a storage node 15 of a DRAM having a COB(capacitor over the bit line) structure is used as a first electrode layer 15a and a bit line 11 and a cell plate 17 are used as second electrode layers 11a and 17a. Two capacitors C1 and C2 which are connected in parallel are formed on and under the first electrode layer 15a and one filter capacitor is constructed by the two capacitors C1 and C2. A dielectric film 14a of the lower capacitor C1 is formed by utilizing a side wall insulating film 14 of a storage contact 13. |
