DIRECT CHIP CONNECTION OF LOW ALPHA PARTICLE EMISSION CONNECTING DEVICE

摘要

PROBLEM TO BE SOLVED: To lessen the amount of emission of αparticles without having a defect in the mutual connection device of a lead base by a method wherein the mutual connection device is constituted into such a structure that an electronic element is positioned on the upper surface of the device and conductive regions on the upper surface and the device comprises a semiconductor chip having conductive bumps separated from each other. SOLUTION: A mutual connection device 34, which is used to an electronic element and has little amount of emission of αparticles, is contrived to be obtained. That is, the device 34 comprises a semiconductor chip 12, which is positioned on the upper surface of the device 34 and conductive regions on the upper surface and has electrically resistive bumps separated from each other. The bumps are formed of a polymer and a composite material containing metal particles. As an embodiment, the chip 12 and a substrate 10 are bonded together at the stage of a treatment. The bumps 26 are formed on the IC chip 12 and the substrate 10 is a bare pad having terminal metallizations 18 consisting of a gold layer. Composite pads consisting of dry bumps and the like are pressed at a junction temperature exceeding the softening temperature of a polymer binder. After the pressure in the pressing and the junction temperature reach the final pressure and temperature, the chip and the substrate are bonded together through mutual connection parts 34.