| 摘要 |
PROBLEM TO BE SOLVED: To obtain high-quality light radiation by implanting a type specific ion to a plurality of layers from an oblique direction at a specific angle that is different from 0 deg. the perpendicular line on the surface and increasing or decreasing the resistance of the ion-implanted part of a specific layer. SOLUTION: A lower reflecting mirror 2, an active layer 3, an upper reflecting mirror (expressed as the sum of an ion-implantation part <high resistance> 42a and an ion non-implantation part <low resistance>), and a light-emitting region 31a, for example, in circular shape can be selected on the surface of a substrate 1. Ion is implanted at 70 deg. with respect to the perpendicular line to the surface of a growth wafer 10, so that a light-emitting region 31a does not overlap an upper electrode 60. Ion implantation is stopped directly above the active layer 3, and no ions are implanted into the active layer 3, so that implanted ions cannot be diffused and hence do not deteriorate the quality of the active layer 3 due to, for example, a succeeding heat treatment, thus obtaining a light emission of high-quality. |
