| 摘要 |
PROBLEM TO BE SOLVED: To obtain smooth etching surface with excellent reproducibility without physical damage at all by a method wherein a title gallium nitride compound semiconductor is heated in the mixed gas of hydrocarbon gas and hydrogen gas for performing etching process. SOLUTION: An etching sample is provided on substrate holder 12 in an etching chamber 1 and the etching chamber 1 is exhausted using a vacuum pump. Later, mass flow controllers 33a, 33b are controlled so that hydrogen gas at the flow rate of 500cc/min as well as methane gas at the flow late of 200cc/min may be run in respectively from a gas leading-in pipes 3a and 3b to be led into the etching chamber 1. After the exhaustion and the pressure reduction, the substrate holder is revolved at the rate of 100 rounds/min successively impressing a heater 13 with a voltage from a DC power supply 4 to heat an etching sample 101. After holding the sample 101 at 1100 deg.C for 30min. it is cooled down to room temperature in nitrogen atmosphere. Through these procedures, a smooth etching surface can be obtained. |
