| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a structure of an electrode on a substrate with an insulating film in between, and its manufacturing method, in which a deterioration in characteristics of an gate insulating film generating in plasma etching can be prevented. SOLUTION: At least an active region 6 other than an active region 2 that is separated by an element separation region 4 is treated in doping of conductive-type other than the type of a substrate 100 to form an ohmic contact region 8, and thereby an electrode 14 formed in the active region 2 is made in contact with the ohmic contact region 8. In this way the ohmic contact region 8 of conductive-type other than the substrate 100 is formed independently from the active region 2. and the electrode has a structure, in which the ohmic contact region 14 is elongated and put in contact with the ohmic contact region 8.</p> |
