| 摘要 |
PROBLEM TO BE SOLVED: To provide a simple manufacturing step for an T-type gate and improve efficiency in manufacturing for a semiconductor device. SOLUTION: An operation layer 2 with a recessed step 4 is formed on a semiconductor substrate 1, and a Si film 3 as an anti-reflection film is formed thereon. The Si film 3 is etched with a mask of a first photoresist film 5A to form an opening part 6. The opening part 6 is filled with Al film 7, and a patterning step is carried out with a mask of a second photoresist mask 5B to form a gate electrode 7A. Then, the photoresist film 5B and the Si film 3 are removed.
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