| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for infrared-emitting diode, capable of being manufactured simply, being mechanically stable, and emitting high luminous intensity. SOLUTION: A semiconductor device for a light-emitting diode, emitting infrared light has two GaAlAs layers. An aluminum content rate in the first GaAlAs P-type layer 3.2, n-type layer 3.1 doped amphoteric by silicon, increases exponentially in the whole first layer thickness from surface of the p-type partial layer and an atomic percentage on the surface side of p-type layer is 0%, approximate 5∼10% in the region of a pn-junction 3.3, and 25∼40% on the surface side of an n-type layer. An aluminum content amount in the second n-type GaAlAs layer 2 formed on the surface side of n-type layer of the first GaAlAs, and doped by tellurium exponentially increases from the boundary surface of the first GaAlAs layer to the second layer and an atomic percentage at the boundary surface of the first GaAlAs layer is approximately 6∼16%. |
