| 摘要 |
PROBLEM TO BE SOLVED: To improve characteristics of a light-emitting element, comprising a III-group nitride semiconductor. SOLUTION: An emission layer 5 has a multiple quantum-well structure, consisting of four barrier layers 51 and three well layers 52 are laminated alternatively. The barrier layer 51 is Al0.05 Ga0.95 N of about 5nm thickness, and the well layer 52 is IN0.20 Ga0.80 N of about 5nm thickness doped with silicon and zinc in the concentration of 5×10<18> /cm<3> respectively. Striped high resistance regions 6 are formed by implanting nitrogen into the emission layer 5, then well layers 52a of non-high resistance sandwiched between the high resistance regions 6 becomes narrower than the specified width by the heat treatment, to manufacture a light-emitting layer of a quantum fine line structure. Thereby, the luminous efficiency can be improved, and also the half bandwidth of the emission spectrum becomes narrow. |
