发明名称 |
THIN FILM TRANSISTOR |
摘要 |
Disclosed is a thin film transistor used for an active matrix panel. The thin film transistor comprises an amorphous silicon layer(5) doped to phosphorous or boron ions. The concentration of phosphorous or boron ions doped into the amorphous silicon layer(5) is range from 0.1 to 1PPM.
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申请公布号 |
KR0133863(B1) |
申请公布日期 |
1998.04.23 |
申请号 |
KR19880018215 |
申请日期 |
1988.12.31 |
申请人 |
SAMSUNG ELECTRONICS CO.,LTD |
发明人 |
CHOE, KWANG-SOO |
分类号 |
H01L29/70;(IPC1-7):H01L29/70 |
主分类号 |
H01L29/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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