| 摘要 |
<p>A method for producing a bipolar semiconductor device having a first layer (3) doped according to a first doping type, said first layer being adapted to have minority charge carriers injected thereinto from a second layer (5) of the device of an opposite doping type to that of the first layer in a forward conducting state of the device, comprises a step of epitaxially growing said first layer during which at least one region (4) of said first layer is provided with a constitution implying a lower lifetime of said minority charge carriers therein than in other parts of said first layer by incorporating impurities in said region during the epitaxial growth thereof.</p> |
