发明名称 Herstellungsverfahren für Röntgenstrahl-Belichtungsmaske und Vorrichtung zur Spannungsmessung dünner Schichten
摘要 An X-ray mask can be manufactured by forming an X-ray transmitting thin film (12) on a mask support (11), forming an X-ray absorber thin film (14) on the X-ray transmitting thin film (12), and patterning the X-ray absorber thin film (14) with a desired pattern to form an X-ray absorber pattern. Prior to the patterning, at least one inert element with an atomic number greater than that of neon is ion-implanted in the X-ray absorber thin film (14).
申请公布号 DE69031576(T2) 申请公布日期 1998.04.23
申请号 DE1990631576T 申请日期 1990.03.16
申请人 KABUSHIKI KAISHA TOSHIBA, KAWASAKI, KANAGAWA, JP 发明人 HORI, MASARU, C/O INTELLECTUAL PROPERTY DIVISION, TOKYO 105, JP;ITOH, MASAMITSU C/O INTELLECTUAL PROPERTYDIVISION, TOKYO 105, JP
分类号 G03F1/08;B81B3/00;B81C1/00;G03F1/14;G03F1/16;G03F1/22;G03F1/68;G03F1/80;H01L21/027;H01L21/30;(IPC1-7):G03F1/14 主分类号 G03F1/08
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