Forming TiN thin films using remote activated species generation

摘要

Im a vapor depcsition chamber which holds a substrate for processing, a method including the steps of forming a layer of material on the surface of the substrate, wherein the layer of material is made of Ti atoms; remotely activating a source gas containing nitrogen so as to produce activated nitrogen gas species; and while forming the layer of material on the substrate, injecting the activated nitrogen species into the processing chamber to increase the population of activated nitrogen species that is incorporated into the layer of material that is being formed. <IMAGE>