发明名称 |
Circuit comprising complementary thin film transistors |
摘要 |
Complementary circuits with inorganic n-channel thin film transistors (TFTs) and organic p-channel TFTs can exhibit advantageous properties, without being subject to some of the drawbacks of prior art complimentary inorganic TFTs or complementary organic TFTs. In preferred embodiments of the invention, the n-channel inorganic TFTs have an amorphous Si active layer, and the p-channel organic TFTs have DELTA -hexathienylene ( alpha -6T) active layer. Complementary inverters according to the invention are disclosed, as is an exemplary processing sequence that can be used to manufacture integrated complementary inverters and other complementary circuits according to the invention. |
申请公布号 |
EP0785578(A3) |
申请公布日期 |
1998.04.22 |
申请号 |
EP19970300063 |
申请日期 |
1997.01.07 |
申请人 |
AT&T CORP. |
发明人 |
BAUMBACH, JOERG;KATZ, HOWARD EDAN;DODABALAPUR, ANANTH |
分类号 |
H01L27/08;H01L21/8238;H01L25/07;H01L27/092;H01L27/12;H01L27/28;H01L29/786;H01L35/24;H01L51/00;H01L51/05;H01L51/30 |
主分类号 |
H01L27/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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