发明名称 |
Dummy wafer |
摘要 |
A dummy wafer for use in the process for thin film formation on water, which is made of a silicon carbide obtained by reacting a glassy carbon with silicon or with a silicon-containing gas, or comprises (1) a silicon carbide obtained by reacting a glassy carbon with silicon or with a silicon-containing gas and (2) a silicon carbide layer formed thereon by CVD. This dummy wafer alleviates the problems of the prior art; shows no warpage and contains no metal to become a contamination source for semiconductor; has corrosion resistance to hydrofluoric acid, hydrochloric acid, etc., heat resistance and resistance to repeated heat cycle; and is inexpensive. |
申请公布号 |
EP0817255(A3) |
申请公布日期 |
1998.04.22 |
申请号 |
EP19970110224 |
申请日期 |
1997.06.23 |
申请人 |
NISSHINBO INDUSTRIES, INC. |
发明人 |
SAITO, KAZUO;MOCHIZUKI, YASUSHI;YAMAMOTO, SEIJI |
分类号 |
G01N1/28;H01L21/02;H01L21/66;H01L23/544 |
主分类号 |
G01N1/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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