发明名称 Dummy wafer
摘要 A dummy wafer for use in the process for thin film formation on water, which is made of a silicon carbide obtained by reacting a glassy carbon with silicon or with a silicon-containing gas, or comprises (1) a silicon carbide obtained by reacting a glassy carbon with silicon or with a silicon-containing gas and (2) a silicon carbide layer formed thereon by CVD. This dummy wafer alleviates the problems of the prior art; shows no warpage and contains no metal to become a contamination source for semiconductor; has corrosion resistance to hydrofluoric acid, hydrochloric acid, etc., heat resistance and resistance to repeated heat cycle; and is inexpensive.
申请公布号 EP0817255(A3) 申请公布日期 1998.04.22
申请号 EP19970110224 申请日期 1997.06.23
申请人 NISSHINBO INDUSTRIES, INC. 发明人 SAITO, KAZUO;MOCHIZUKI, YASUSHI;YAMAMOTO, SEIJI
分类号 G01N1/28;H01L21/02;H01L21/66;H01L23/544 主分类号 G01N1/28
代理机构 代理人
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