Manufacturing method for semiconductor device.

摘要

A manufacturing method for a semiconductor device is preferably used for a semiconductor device using SOI (Silicon on Insulation) technology. At minimum, the method includes the following steps: the step of forming a gate electrode (5) on a substrate (1) by using a light-intercepting material; of forming a gate insulating film (4) on the substrate (1) including the gate electrode (5); of forming a semiconductor layer (3) on the gate insulating film (4); and of forming a source region (2a) and a drain region (2b) by virtue of the fact that the light (hD), having a wavelength such that the light is absorbed into the semiconductor layer (3) while not being absorbed into the substrate (1), is irradiated from the back of the substrate (1), before supplying impurities into the semiconductor layer (3).