| 摘要 |
PURPOSE:To obtain a receptor with enhanced charging properties, enhanced potential retentivity, superior durability, etc. by forming an amorphous silicon (a-Si) layer on a substrate by a plasma chemical vapor deposition method in the presence of silane, diborane and N2 optionally together with PH3. CONSTITUTION:On an electrically conductive substrate 2 of Al or the like an a-Si layer 1 is formed by a plasma CVD method in the presence of 5-40, preferably 5-20% silane, 10-500, preferably 20-100ppm diborane (B2H6) and 1-20, preferably 2-15% N2 to the total flow rate of gases. Thus, a receptor with high positively and negatively charging properties, potential retentivity and light attenuation is obtd. By further adding less than 3 times as much gaseous PH3 as B2H6, loss in the charging properties is inhibited, and the photosensitivity is enhanced remarkably. When an a-Si layer [I] 3 is first formed on the substrate by vapor deposition in the presence of B2H6 or N2 alone together with silane, and an a-Si layer [II] 4 is formed in the presence of B2H6 and N2, receptors for positive charging and for negative charging are obtd. in case where the layers 3 are formed in the presence of B2H6 alone and N2 alone, respectively. |
