| 发明名称 |
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| 摘要 |
PURPOSE:To manufacture the stepped electrode transistor preventing the electrode metal from penetrating into the polycrystalline Si layer by a method wherein the fine transition metal such as Ti etc. is utilized as the lower layer to manufacture the electrode of high frequency transistor. CONSTITUTION:The platinum silicide 8 coming into resistive contact with the upper surface of polycrystalline silicon layer 4 and the surface of base contact region 7 is formed by the processes such as upper deposition, alloying platinum and removing residual platinum. Then the Ti layer 9 is formed by evapolating Ti almost perpendicularly from the surface. The Ti layer 9 on the multicrystal silicon layer 4 is separated from said layer 9 on the other region, since said layer 4 is formed into reversed rack type. Next the Ti nitride layer 14 is formed by the reactive sputtering in the atmosphere containing nitrogen. The sputtering may be performed in the atmosphere containing nitrogen and argon with the mixing ratio of say 1:5 under the pressure of 30milli-Torr. |
| 申请公布号 |
JPH0347731(B2) |
申请公布日期 |
1991.07.22 |
| 申请号 |
JP19810145858 |
申请日期 |
1981.09.16 |
| 申请人 |
NIPPON DENKI KK;NIPPON DENSHIN DENWA KK |
发明人 |
TAKASHINA REIJI;KANAMORI SHUICHI |
| 分类号 |
H01L29/73;H01L21/28;H01L21/331;H01L29/43 |
主分类号 |
H01L29/73 |
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