STRUCTURE AND MANUFACTURING METHOD OF COMPLEX SEMICONDUCTOR ELEMENT

摘要

The BI-CMOS containing the bipolar and CMOS is fabricated by electrically isolating the both sides of N+-polycrystalline Si acting as the source and drain of CMOS, and the emitter and collector of bipolar. The width of inactive base region is reduced by dry etching the silicon after depositing the nitride film. The inactive base region and all junctions are formed to reduce the serics resistance of base in bipolar transistor by wet etching the nitride films after depositing the base oxide film of CMOS followed by aluminium metallization.