| 摘要 |
Disclosed is a multi-plans sputtering target and a method of using the multi-planar sputtering target in PVD sputtering for filling high aspect ratio interconnect structure openings. The multi-planar sputtering target comprises at least two planar sheets of conductive filler material joined together at a common edge with a selected angle between them. The multi-planar sputtering target is situated in a manner whereby an interior portion is facing an semiconductor wafer that is to be filled. The angle of the planes of the multiplanar sputtering target relative to the semiconductor wafer is selected such that a primary concentration of sputtered material is directed in either a normal angle of trajectory, or in a selected angle of trajectory that is selected for filling bottom corners of the interconnect structure opening. An ion acceleration grid can be used to vary the focus of an ion beam on different planar sheets of the multi-planar sputtering target so that different angles of trajectory of sputtered material can be employed in filling the interconnect structure opening. A magnetic field can also be used to correct the occurrence of center to edge non-uniformity.
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