发明名称 |
Electrically modifiable non-volatile memory with write checking |
摘要 |
In order to make it possible to ascertain that the programming cycles in an EEPROM type memory have been carried out efficiently, supplementary test cells are provided. A data writing operation is carried out in three successive cycles that consist in the programming of a test cell with a first logic value, a second cycle for the programming of the data elements and a third cycle for the programming of the test cell with a logic value that is complementary to the first one. The state of the test cell enables the detection of power interruptions during programming.
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申请公布号 |
US5742548(A) |
申请公布日期 |
1998.04.21 |
申请号 |
US19940340940 |
申请日期 |
1994.11.17 |
申请人 |
SGS-THOMSON MICROELECTRONICS, S.A. |
发明人 |
BAHOUT, YVON;TAILLIET, FRANCOIS |
分类号 |
G11C17/00;G11C16/02;G11C16/04;G11C29/00;G11C29/04;G11C29/24;G11C29/52;(IPC1-7):G11C7/00 |
主分类号 |
G11C17/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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