VCSEL with integrated pin diode

摘要

A VCSEL (113) having first and second stacks of DBRs (120, 116) and an active region sandwiched therebetween (118) is formed. A PIN photo-detector is integrated onto the VCSEL by positioning it on the second stack in the light path. The PIN photo detector includes a first doped region (104), a second undoped (intrinsic) region (106), and a third doped region (108). A first conductive layer (134) is provided in contact with the second stack and the first region and a second conductive layer is provided in contact with the third region.